Semiconductor integrated circuit

ABSTRACT

In a dynamic flip-flop circuit with a data selection function, for example, when data having an H value is selected using a selection signal, a first node N 1  is L, a second node N 2  of a second dynamic circuit is H, so that an output signal has an H level. In this case, when none of a plurality of pieces of data is selected using a selection signal, the first node N 1  is H, so that the electric charge of the second node N 2  is discharged and the output signal erroneously has an L level. However, in this case, an output node N 3  is H and a fourth node N 4  is L, so that an n-type transistor of the second dynamic circuit is turned OFF, thereby preventing the second node N 2  from being discharged. Therefore, a normal operation is performed while securing a satisfactorily high-speed operation even when none of the pieces of data is selected.

CROSS REFERENCE TO RELATED APPLICATIONS

This Non-provisional application claims priority under 35 U.S.C. §119(a)on Patent Application No. 2004-218244 filed in Japan on Jul. 27, 2004,the entire contents of which are hereby incorporated by reference. Theentire contents of Patent Application No. 2005-194608 filed in Japan onJul. 4, 2005 are also incorporated by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor integrated circuit, andmore particularly, to a high-speed semiconductor integrated circuit.

Conventionally, the speed of a semiconductor integrated circuit,particularly a flip-flop circuit, is increased by incorporating adynamic circuit into its internal structure as described in, forexample, JP No. 2003-060497 A. The dynamic flip-flop circuit describedin this publication receives a plurality of pieces of data, selects anyone of them, and holds and outputs the selected data.

Hereinafter, the structure of the flip-flop circuit having the dataselection function will be described with reference to FIG. 3A. In FIG.3A, a data selection circuit 91 is provided at the previous stage of aholding circuit 90. In the data selection circuit 91, when a clock CLKis at a Low level (Low period), a node N1 is precharged to a powersource potential Vdd by a p-type transistor Tr1, while a node N2 isprecharged to the power source potential Vdd by a p-type transistorTr50. Near the end of this period, one of selection signals S0 to S2which is used to select a corresponding one of a plurality of pieces ofdata D0 to D2 is turned High. Subsequently, when the clock CLK goes toHigh and the selected data (e.g., D0) is at a High level, the electriccharge of the node N1 is discharged via an n-type transistor Tr2, sothat the potential of the node N1 becomes equal to that of the ground.Therefore, an n-type transistor Tr51 is turned OFF, so that theprecharge potential of the node N2 is held. In this case, this potentialis held as an H value by the holding circuit 90, which in turn outputsan output signal Q indicating the H value.

On the other hand, when the selected data D0 is at a Low level, theelectric charge of the node N1 is not discharged, so that the potentialof the node N1 is held as it is the precharge potential and the n-typetransistor Tr51 is turned ON. As a result, the electric charge of thenode N2 is discharged via the n-type transistor Tr51 and the n-typetransistor Tr2, so that the potential of the node N2 becomes an L value.The L value is held by the holding circuit 90, which in turn outputs anoutput signal Q indicating the L value.

Note that, in FIG. 3A, SI indicates a data input when scanning isperformed, SE indicates a scan shift control signal, and SEB indicatesan inverted signal of the scan shift control signal.

However, it was found that the conventional dynamic flip-flop circuithaving the data selection function malfunctions when none of theplurality of pieces of data is selected. Hereinafter, the malfunctionwill be described.

In an ordinary operation, for example, the node N2 is at the prechargepotential (H value) and the holding circuit 90 outputs the output signalQ indicating the H value. In this case, when none of the plurality ofpieces of data D0 to D2 is selected during the next High period of theclock CLK (i.e., all the selection signals S0 to S2 have the Low value),the n-type transistor Tr2 is turned ON. However, the precharge potentialof the node N1 is held, so that the n-type transistor Tr51 is turned ON.Therefore, the electric charge of the node N2 is discharged via then-type transistors Tr51 and Tr2 to the L value. As a result, the holdingcircuit 90 erroneously outputs an output signal Q indicating the Lvalue.

To solve the above-described problems, for example, the followingcircuit is considered which inputs a signal to the gate of the n-typetransistor Tr2 as shown in FIG. 3B. Specifically, a static circuitcomprising a circuit 92 including an OR circuit which receives all theselection signals S0 to S2 and a latch circuit which latches an outputof the OR circuit during a High period of the clock CLK, and an ANDcircuit 93 which receives an output of the latch circuit and the clockCLK, is additionally provided, and an output of the AND circuit 93 isinput to the gate of the n-type transistor Tr2.

In this case, however, all the selection signals S0 to S2 need to bepassed through the OR circuit and the latch circuit by a rising time ofthe clock CLK. Therefore, an extra setup time (a time required for thestatic circuit to establish its output by a rising time of the clockCLK) is required, resulting in impairment of the speed of operation.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a dynamic flip-flopcircuit with a data selection function which can operate normally whilesecuring a satisfactorily high-speed operation even when none of aplurality of pieces of data is selected.

To achieve the object, according to the present invention, when none ofa plurality of pieces of data is selected, for example, the precharge ofthe node N2 is prevented from being discharged of FIG. 3A, so that the Hvalue of the node N2 is maintained. The holding circuit holds andoutputs the H value of the node N2.

A semiconductor integrated circuit of the present invention receives aclock, a plurality of pieces of data, and a plurality of selectionsignal for selecting the data, and when the clock is transitioned,outputs a selected one of the pieces of data selected by the selectionsignal to a holding circuit. The semiconductor integrated circuitcomprises a non-selected state detection circuit of detecting that allof the plurality of selection signals selects none of the plurality ofpieces of data. In the non-selected state detection circuit, when it isdetected that all of the plurality of selection signals selects none ofthe plurality of pieces of data, the previously selected data isprevented from being changed, thereby holding output data of the holdingcircuit.

Another semiconductor integrated circuit of the present inventioncomprises a NOR type first dynamic circuit of receiving a first clockand a plurality of pieces of data, wherein a first output node ischarged during a first period which is one of a period from rising tofalling of the first clock and a period of falling to rising of thefirst clock, and during a second period which is the other period,electric charge of the first output node is held when all of theplurality of pieces of data have the same value, while the electriccharge of the first output node is discharged when at least one of theplurality of pieces of data has a different value from the other piecesof data, a NAND type second dynamic circuit of receiving a second clockand a signal of the first output node of the first dynamic circuit,wherein, during a first period or a second period of the second clock,electric charge of the second output node is held when the electriccharge of the first output node of the first dynamic circuit isdischarged, while the electric charge of the second output node isdischarged when the electric charge of the first output node is held, aNOR type third dynamic circuit of receiving a third clock and aplurality of selection signals for selecting the respective pieces ofdata, wherein a third output node is charged during a first period ofthe third clock, and during a second period of the third clock, electriccharge of the third output node is held when all of the plurality ofselection signals selects none of the plurality of pieces of data, and aNAND type fourth dynamic circuit of receiving a fourth clock and asignal of the third output node of the third dynamic circuit, wherein,during a first period or a second period of the fourth clock, electriccharge of the fourth output node is discharged when the electric chargeof the third output node of the third dynamic circuit is held. When thesecond dynamic circuit receives a signal of the fourth output node ofthe fourth dynamic circuit and the electric charge of the fourth outputnode is discharged, the second dynamic circuit holds the electric chargeof the second output node even when the electric charge of the firstoutput node of the first dynamic circuit is held.

In an example of the semiconductor integrated circuit of the presentinvention, the NOR type third dynamic circuit and the NAND type fourthdynamic circuit are physically arranged closer to the NAND type seconddynamic circuit than to the NOR type first dynamic circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the NOR type third dynamic circuit and the NAND type fourthdynamic circuit operate with higher speed than that of the NOR typefirst dynamic circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the NOR type third dynamic circuit and the NAND type fourthdynamic circuit have a higher supply voltage than that of the NOR typefirst dynamic circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the NOR type third dynamic circuit and the NAND type fourthdynamic circuit are physically arranged at a larger distance from anisolation region formed on a semiconductor substrate than from the NORtype first dynamic circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the semiconductor integrated circuit further comprises anoutput circuit of receiving the selected data and outputting theselected data. The output circuit comprises a NOR circuit of receivingan output of the NOR type first dynamic circuit and an inverted outputof the NAND type second dynamic circuit, a first n-type transistor ofreceiving the output of the NOR circuit through a gate thereof, and afirst p-type transistor of receiving an output of the NAND type seconddynamic circuit through a gate thereof. A drain of the first n-typetransistor and a drain of the first p-type transistor are connected toeach other.

In an example of the semiconductor integrated circuit of the presentinvention, the output circuit further comprises a second n-typetransistor of receiving an output of the NAND type fourth dynamiccircuit through a gate thereof. A drain of the second n-type transistoris connected to a source of the first n-type transistor.

In an example of the semiconductor integrated circuit of the presentinvention, the holding circuit of holding the selected data is connectedto the drain of the first n-type transistor and the drain of the firstp-type transistor which are two output terminals of the output circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the holding circuit comprises a first inverter circuit towhose input side the drain of the first p-type transistor of the outputcircuit is connected, a second inverter circuit of receiving an outputof the first inverter circuit, wherein the first n-type transistor andthe first p-type transistor are connected in series, and a second n-typetransistor of receiving an output of the NAND type second dynamiccircuit. The second n-type transistor is disposed between the n-typetransistor and the p-type transistor of the second inverter circuit orbetween the n-type transistor of the second inverter circuit and theground.

In an example of the semiconductor integrated circuit of the presentinvention, the semiconductor integrated circuit further comprises anoutput circuit of receiving the selected data and outputting theselected data. The output circuit comprises a differential circuithaving a differential input terminal composed of two input terminals anda differential output terminal, and an OR circuit of receiving an outputof the NOR type first dynamic circuit and an inverted output of the NANDtype second dynamic circuit. An output of the OR circuit is input to oneof the input terminals of the differential input terminal of thedifferential circuit. An output of the NAND type second dynamic circuitis input to the other of the input terminals of the differential inputterminal of the differential circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the differential circuit comprises a control transistor whichallows the differential circuit to perform a differential amplificationoperation. The control transistor includes an n-type transistor, whereina drain of the n-type transistor is connected to a source of thedifferential circuit, a source of the n-type transistor is connected tothe ground, and the n-type transistor receives a control signal througha gate thereof.

In an example of the semiconductor integrated circuit of the presentinvention, resistors are connected in parallel to the controltransistor.

In an example of the semiconductor integrated circuit of the presentinvention, the semiconductor integrated circuit further comprises asignal generation circuit of generating a control signal which issupplied to the gate of the control transistor. The signal generationcircuit comprises a short pulse generation circuit of generating a shortpulse from a clock signal, and a NAND circuit of receiving the shortpulse and an output of the NAND type fourth dynamic circuit. An outputof the NAND circuit is supplied as the control signal to the gate of thecontrol transistor.

In an example of the semiconductor integrated circuit of the presentinvention, transistors included in the NOR type third dynamic circuitand the NAND type fourth dynamic circuit have a threshold voltage lowerthan that of a transistor included in the NOR type first dynamiccircuit.

In an example of the semiconductor integrated circuit of the presentinvention, the first, second, third and fourth clock signals are thesame clock signal.

Another semiconductor integrated circuit of the present inventionreceives a clock, data, and previous output data of a holding circuit,and when the clock is transitioned, outputting the data while holdingthe data in the holding circuit. The semiconductor integrated circuitcomprises a matching detection circuit of detecting a match between thedata and the previous data of the holding circuit. When the matchingdetection circuit has detected the match between the data and theprevious data of the holding circuit, at least a portion of the holdingcircuit is stopped.

Another semiconductor integrated circuit of the present inventioncomprises a NOR type first dynamic circuit of receiving a first clock,data and pre-inverted data, the pre-inverted data being an invertedvalue of a previous value of the data, and wherein a first output nodeis charged during a first period which is one of a period from rising tofalling of the first clock and a period of falling to rising of thefirst clock, and during a second period which is the other period,electric charge of the first output node is discharged when the data andthe pre-inverted data match, i.e., both are Low or High, a NAND typesecond dynamic circuit of receiving a second clock and a signal of thefirst output node of the first dynamic circuit, wherein, during a firstperiod or a second period of the second clock, electric charge of asecond output node is held when the electric charge of the first outputnode is discharged, while the electric charge of the second output nodeis discharged when the electric charge of the first output node is held,a NOR type third dynamic circuit of receiving a third clock, the dataand inverted data thereof, and the pre-inverted data and the data whichis an inverted value of the pre-inverted data, wherein, during a firstperiod of the third clock, a third output node is charged, and duringthe second period, electric charge of the third output node is held whenthe data and the pre-inverted data match or the inverted data and theprevious data match, and a NAND type fourth dynamic circuit of receivinga fourth clock and a signal of the third output node of the thirddynamic circuit, wherein, during a first period of the fourth clock,electric charge of a fourth output node is discharged when the electriccharge of the third output node is held. The second dynamic circuitreceives a signal of the fourth output node of the fourth dynamiccircuit, and when electric charge of the fourth output node isdischarged, the electric charge of the second output node is held evenwhen the electric charge of the first output node of the first dynamiccircuit is held.

In an example of the semiconductor integrated circuit of the presentinvention, the NOR type third dynamic circuit and the NAND type fourthdynamic circuit are physically arranged closer to the NAND type seconddynamic circuit than to the NOR type first dynamic circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the NOR type third dynamic circuit and the NAND type fourthdynamic circuit operate with higher speed than that of the NOR typefirst dynamic circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the NOR type third dynamic circuit and the NAND type fourthdynamic circuit have a higher supply voltage than that of the NOR typefirst dynamic circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the NOR type third dynamic circuit and the NAND type fourthdynamic circuit are physically arranged at a larger distance from anisolation region formed on a semiconductor substrate than from the NORtype first dynamic circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the semiconductor integrated circuit further comprises anoutput circuit of receiving the selected data and outputting theselected data. The output circuit comprises a NOR circuit of receivingan output of the NOR type first dynamic circuit and an inverted outputof the NAND type second dynamic circuit, a first n-type transistor ofreceiving the output of the NOR circuit through a gate thereof, and afirst p-type transistor of receiving an output of the NAND type seconddynamic circuit through a gate thereof. A drain of the first n-typetransistor and a drain of the first p-type transistor are connected toeach other.

In an example of the semiconductor integrated circuit of the presentinvention, the output circuit further comprises a second n-typetransistor of receiving an output of the NAND type fourth dynamiccircuit through a gate thereof. A drain of the second n-type transistoris connected to a source of the first n-type transistor.

In an example of the semiconductor integrated circuit of the presentinvention, the holding circuit of holding the selected data is connectedto the drain of the first n-type transistor and the drain of the firstp-type transistor which are two output terminals of the output circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the holding circuit comprises a first inverter circuit towhose input side the drain of the first p-type transistor of the outputcircuit is connected, a second inverter circuit of receiving an outputof the first inverter circuit, wherein the first n-type transistor andthe first p-type transistor are connected in series, and a second n-typetransistor of receiving an output of the NAND type second dynamiccircuit. The second n-type transistor is disposed between the n-typetransistor and the p-type transistor of the second inverter circuit orbetween the n-type transistor of the second inverter circuit and theground.

In an example of the semiconductor integrated circuit of the presentinvention, the semiconductor integrated circuit further comprises anoutput circuit of receiving the selected data and outputting theselected data. The output circuit comprises a differential circuithaving two differential input terminals and a differential outputterminal, and an OR circuit of receiving an output of the NOR type firstdynamic circuit and an inverted output of the NAND type second dynamiccircuit. An output of the OR circuit is input to one of the differentialinput terminals of the differential circuit. An output of the NAND typesecond dynamic circuit is input to the other of the differential inputterminals of the differential circuit.

In an example of the semiconductor integrated circuit of the presentinvention, the differential circuit comprises a control transistor whichallows the differential circuit to perform a differential amplificationoperation. The control transistor includes an n-type transistor, whereina drain of the n-type transistor is connected to a source of thedifferential circuit, a source of the n-type transistor is connected tothe ground, and the n-type transistor receives a control signal througha gate thereof.

In an example of the semiconductor integrated circuit of the presentinvention, resistors are connected in parallel to the controltransistor.

In an example of the semiconductor integrated circuit of the presentinvention, the semiconductor integrated circuit further comprises asignal generation circuit of generating a control signal which issupplied to the gate of the control transistor. The signal generationcircuit comprises a short pulse generation circuit of generating a shortpulse from a clock signal, and a NAND circuit of receiving the shortpulse and an output of the NAND type fourth dynamic circuit. An outputof the NAND circuit is supplied as the control signal to the gate of thecontrol transistor.

In an example of the semiconductor integrated circuit of the presentinvention, transistors included in the NOR type third dynamic circuitand the NAND type fourth dynamic circuit have a threshold voltage lowerthan that of a transistor included in the NOR type first dynamiccircuit.

In an example of the semiconductor integrated circuit of the presentinvention, the first, second, third and fourth clock signals are thesame clock signal.

In an example of the semiconductor integrated circuit of the presentinvention, an inverted node of the third output node of the thirddynamic circuit is connected to the second dynamic circuit. The seconddynamic circuit discharges electric charge of the second output nodethereof when electric charge is charged in the inverted node of thethird output node and electric charge of the fourth output node of thefourth dynamic circuit is held. The second dynamic circuit holdselectric charge of the second output node thereof when electric chargeof the inverted node of the third output node is held and electriccharge of the fourth output node is discharged.

In an example of the semiconductor integrated circuit of the presentinvention, the third dynamic circuit has a first n-type transistorhaving a gate to which the third clock signal is input, a second groupof n-type transistors having sources connected in common to a drain ofthe first n-type transistor, and a third group of n-type transistorshaving sources connected in common to sources of the second group ofn-type transistors. A potential of at least one of gates of the secondgroup of n-type transistors is set to be a power source potential, and apotential of the other gates are set to be a ground potential. Gates ofthe third group of n-type transistors are connected to any of theplurality of selection signals, and drains of the third group of n-typetransistors are connected in common to the third output node. Aninverted node of the third output node of the third dynamic circuit isconnected to the second dynamic circuit. The third output node and aninverted node of the drains connected in common of the second group ofn-type transistors are connected to the fourth dynamic circuit. Thesecond dynamic circuit discharges electric charge of the second outputnode thereof when electric charge is charged in the inverted node of thethird output node and electric charge of the fourth output node of thefourth dynamic circuit is held. The second dynamic circuit holdselectric charge of the second output node thereof when electric chargeof the inverted node of the third output node is held and electriccharge of the fourth output node is discharged.

In an example of the semiconductor integrated circuit of the presentinvention, the third dynamic circuit has a first n-type transistorhaving a gate to which the third clock signal is input, and a thirdgroup of n-type transistors having sources connected in common. Gates ofthe third group of n-type transistors are connected to any of theplurality of selection signals, and drains of the third group of n-typetransistors are connected in common to the third output node. The fourthdynamic circuit discharges electric charge of the fourth output nodethereof when electric charge of the third output node is held. Thefourth dynamic circuit holds electric charge of the fourth output nodewhen electric charge of the third output node is discharged.

In an example of the semiconductor integrated circuit of the presentinvention, the third dynamic circuit further includes a first p-typetransistor having a gate to which the third clock signal is input and adrain connected to the sources of the third group of n-type transistors,and a second p-type transistor having a gate to which the third clocksignal is input, a source connected to the drains of the third group ofn-type transistors, and a drain connected to the sources of the thirdgroup of n-type transistors.

In an example of the semiconductor integrated circuit of the presentinvention, the electric charge charged to the first output node issupplied from the third output node.

In an example of the semiconductor integrated circuit of the presentinvention, the electric charge charged to the second output node issupplied from the first output node.

In an example of the semiconductor integrated circuit of the presentinvention, the electric charge charged to the fourth output node issupplied from the first output node.

In an example of the semiconductor integrated circuit of the presentinvention, the first dynamic circuit comprises a first p-type transistorhaving a gate connected to an inverted output of the first output nodeof the first dynamic circuit, and a second p-type transistor connectedto the first clock signal. The first p-type transistor and the secondp-type transistor are connected in series, and a source of one of thep-type transistors is connected to a power source, and a drain of theother p-type transistor is connected to the fourth output node or thesecond output node.

In an example of the semiconductor integrated circuit of the presentinvention, a potential of at least one of the gates of the second groupof n-type transistors is connected via a potential setting transistor tothe power source potential, and the second group of n-type transistorsand the potential setting transistor are provided in the same standardcell.

In an example of the semiconductor integrated circuit of the presentinvention, the potential setting transistor is the p-type transistorhaving a drain connected to the at least one gate of the second group ofn-type transistors. In said same standard cell, an n-type transistorhaving a source grounded, and a drain and a gate connected to thepotential setting transistor.

Another semiconductor integrated circuit comprises two of theabove-described semiconductor integrated circuits. Sources and thedrains of the first n-type transistors of the two semiconductorintegrated circuits are connected in common to each other, respectively,and sources and the drains of the first p-type transistors of the twosemiconductor integrated circuits are connected in common to each other,respectively.

Another semiconductor integrated circuit of the present inventioncomprises two of the above-described semiconductor integrated circuits.The output circuits of the two semiconductor integrated circuits areused to form a logic.

In an example of the semiconductor integrated circuit of the presentinvention, the semiconductor integrated circuit further comprises afirst inverter circuit which is connected to the drains of the firstp-type transistors of the output circuits of the two semiconductorintegrated circuits in common, and a second invertercircuit whichreceives an output of the first inverter, wherein the first invertercircuit and the second inverter circuit constitute a holding circuit.The second inverter circuit comprises an n-type transistor and a p-typetransistor, and an n-type transistor having a gate shared with thecorresponding first p-type transistor of the two output circuits isprovided in series between the n-type transistor and the p-typetransistor of the second inverter circuit or between the n-typetransistor of the second inverter circuit and the ground.

Another semiconductor integrated circuit of the present inventioncomprises the above-described semiconductor integrated circuit and astatic flip-flop. The output circuit receives an output of the staticflip-flop and outputs any one of the selected data and the output of thestatic flip-flop.

In an example of the semiconductor integrated circuit of the presentinvention, scan test data is input to the static flip-flop.

Thus, according to the present invention, in the dynamic flip-flopcircuit with a data selection function, for example, when the outputsignal of the data selection circuit is high, and thereafter, none ofthe selection signals is activated so that none of the data is selected,this situation is detected and the output signal of the data selectioncircuit is held high. Therefore, an erroneous operation does not occur.

In addition, according to the present invention, when the input datamatches a value of the output signal of the holding circuit, anoperation of the holding circuit or the like can be stopped. As aresult, a needless operation can be suppressed, thereby reducing powerconsumption.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a semiconductor integrated circuitaccording to Example 1 of the present invention.

FIG. 2 is a diagram illustrating an outline of a layout structure of amajor portion of the semiconductor integrated circuit.

FIG. 3A is a diagram illustrating a major structure of a conventionalsemiconductor integrated circuit. FIG. 3B is a diagram illustrating aproposed example which removing a drawback of the semiconductorintegrated circuit.

FIG. 4 is a diagram illustrating an operation timing chart of thesemiconductor integrated circuit of Example 1 of the present invention.

FIG. 5 is a diagram illustrating an internal structure of an outputcircuit included in a semiconductor integrated circuit according toExample 2 of the present invention.

FIG. 6 is a diagram illustrating an internal structure of a circuit ofgenerating a clock to be supplied to the output circuit.

FIG. 7 is a diagram illustrating an operation timing chart of the outputcircuit and the clock generation circuit.

FIG. 8 is a diagram illustrating a structure of a semiconductorintegrated circuit according to Example 3 of the present invention.

FIG. 9 is a diagram illustrating a variation of the semiconductorintegrated circuit of FIG. 1.

FIG. 10 is a diagram illustrating a layout structure of a major portionof the semiconductor integrated circuit of FIG. 9.

FIG. 11 is a diagram illustrating another variation of the semiconductorintegrated circuit of FIG. 9.

FIG. 12 is a diagram illustrating a structure of a semiconductorintegrated circuit according to Example 4 of the present invention.

FIG. 13 is a timing chart of each node with respect to a signal inputpattern in the semiconductor integrated circuit of Example 4.

FIG. 14 is a timing chart of each node with respect to another signalinput pattern in the semiconductor integrated circuit of Example 4.

FIG. 15 is a diagram illustrating a structure of a semiconductorintegrated circuit according to Example 5 of the present invention.

FIG. 16 is a timing chart of each node with respect to a signal inputpattern in the semiconductor integrated circuit of Example 5.

FIG. 17 is a timing chart of each node with respect to another signalinput pattern in the semiconductor integrated circuit of Example 5.

FIG. 18 is a timing chart of each node with respect to still anothersignal input pattern in the semiconductor integrated circuit of Example5.

FIG. 19 is a diagram illustrating a structure of a semiconductorintegrated circuit according to Example 6 of the present invention.

FIG. 20 is a diagram illustrating a structure of a semiconductorintegrated circuit according to Example 7 of the present invention.

FIG. 21 is a diagram illustrating a structure of a variation of asemiconductor integrated circuit according to Example 7 of the presentinvention.

FIG. 22 is a diagram illustrating a structure of a semiconductorintegrated circuit according to Example 8 of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, the present invention will be described by way ofpreferable illustrative examples with reference to the accompanyingdrawings.

Example 1

FIG. 1 illustrates a semiconductor integrated circuit according toExample 1 of the present invention.

In FIG. 1, D0, D1 and D2 indicate data; S0, S1 and S2 indicate selectionsignals which are used to select the data D0 to D2, respectively; SIindicates a data input when scanning is performed; SE indicates a scanshift control signal which is used to perform a scan shift operation;SEB indicates an inverted signal of the scan shift control signal; and Qand SO indicate output terminals.

The semiconductor integrated circuit of FIG. 1 has a first dynamiccircuit 1A of NOR type, a second dynamic circuit 1B of NAND type, athird dynamic circuit 1C of NOR type, a fourth dynamic circuit 1D ofNAND type, an output circuit 1E, and a holding circuit 1F. The outputcircuit 1E and the holding circuit 1F constitute a dynamic flip-flopcircuit.

The first dynamic circuit 1A of NOR type receives the three pieces ofdata D0 to D2, the three selection signals S0 to S2, and a first clockCLK1, and has two p-type MOS transistors Tr1 and Tr3 and an n-type MOStransistor Tr2.

The first dynamic circuit 1A controls the selection signals S0 to S2 tobe all Low during a first period which is a half period of the firstclock CLK1 from falling to rising (i.e., the first clock CLK1 is Low).Therefore, during the first period, the p-type transistor Tr1 is ON anda first output node N1 is precharged to a power source voltage Vdd.Thereafter, during a second period which is a half period of the firstclock CLK1 from rising to falling (i.e., the first clock CLK1 is High),the p-type transistors Tr1 and Tr3 are OFF, while the n-type transistorTr2 is ON, so that any one of the selection signals S0 to S2 iscontrolled to be High. Therefore, during the second period, thepotential of the first output node N1 is determined depending on thevalue of one of the data D0 to D2 which is selected using the selectionsignal which is controlled to be High. For example, when the data D0 isLow, the precharged state of the first output node N1 is held and thefirst output node N1 is held at the power source potential Vdd. On theother hand, when the data D0 is High, the electric charge of the firstoutput node N1 is discharged via the n-type transistor Tr2, so that thepotential of the first output node N1 becomes equal to the groundpotential.

The second dynamic circuit 1B of NAND type receives a second clock CLK2and a signal from the first output node N1 of the first dynamic circuit1A. Further, the second dynamic circuit 1B of NAND type has two p-typeMOS transistors Tr4 and Tr8, three n-type MOS transistors Tr5 to Tr7.The gate of the n-type transistor Tr5 receives a signal from the firstoutput node N1 of the first dynamic circuit 1A.

In the second dynamic circuit 1B, during a first period in which thesecond clock CLK2 is Low, the p-type transistor Tr4 is ON and the n-typetransistor Tr7 is OFF. Therefore, in this case, a second output node N2is precharged to the power source potential Vdd. Thereafter, during asecond period in which the second clock CLK2 is High, the prechargeoperation is stopped and the n-type transistor Tr5 is turned ON/OFF,depending on the potential of the first output node N1 of the firstdynamic circuit 1A. For example, when Low data D0 is selected, then-type transistor Tr5 is turned OFF and the precharged state of thesecond output node N2 is held. On the other hand, when High data D0 isselected, the n-type transistor Tr5 is turned ON and the electric chargeof the second output node N2 is discharged via the two n-typetransistors Tr5 and Tr7. The n-type transistor Tr6 is an importanttransistor for Example 1, and a function thereof will be describedbelow.

The third dynamic circuit 1C of NOR type receives a third clock CLK3,the three selection signals S0 to S2, and the scan shift control signalSE, and has two p-type transistors Tr9 and Tr11, an n-type transistorTr10, and an inverter IN3.

In the third dynamic circuit (non-selected state detection circuit) 1C,during a first period in which the third clock CLK3 is Low, the p-typetransistor Tr9 is turned ON and the n-type transistor Tr10 is turnedOFF, so that a third output node N3 is precharged to the power sourcepotential Vdd. Thereafter, during a second period in which the thirdclock CLK3 is High, when all of the three selection signals S0 to S2 andthe scan shift control signal SE are Low (i.e., none of the data D0 toD2 is selected), the precharged state of the third output node N3 isheld and this state is detected. On the other hand, when any one of theselection signals goes to High, the electric charge of the third outputnode N3 is discharged via the n-type transistor Tr10, so that thepotential thereof becomes Low.

Further, the fourth dynamic circuit 1D of NAND type receives a fourthclock CLK4 and a signal of the third output node N3 of the third dynamiccircuit 1C, and has two p-type MOS transistors Tr12 and Tr15 and twon-type MOS transistors Tr13 and Tr14. The gate of the n-type MOStransistor Tr13 receives the signal of the third output node N3 of thethird dynamic circuit 1C.

In the fourth dynamic circuit 1D of NAND type, during a first period inwhich the fourth clock CLK4 is Low, the p-type transistor Tr12 is ON andthe n-type MOS transistor Tr14 is OFF, so that a fourth output node N4is precharged to the power source potential Vdd. On the other hand,during a second period in which the fourth clock CLK4 is High, thep-type transistor Tr12 is OFF, so that the precharge operation isstopped and the n-type MOS transistor Tr14 is ON. Therefore, thepotential of the fourth output node N4 is determined, depending on theON/OFF of the n-type transistor Tr13. In other words, during the secondperiod, the electric charge of the third output node N3 of the thirddynamic circuit 1C is held. In other words, in an ordinary operation,when all of the selection signals S0 to S2 are Low and none of the dataD0 to D2 is selected, the electric charge of the fourth output node N4is discharged via the n-type transistors Tr13 and Tr14, so that thepotential of the fourth output node N4 becomes Low. On the other hand,when High data is selected from any one of the selection signals S0 toS2 and the electric charge of the third output node N3 of the thirddynamic circuit 1C is discharged, the n-type MOS transistor Tr13 isturned OFF, so that the precharged state of the fourth output node N4 isheld.

The second dynamic circuit 1B of NAND type is provided with the n-typeMOS transistor Tr6 which receives via its gate a signal of the fourthoutput node N4 of the fourth dynamic circuit 1D. The n-type transistorTr6 is connected in series to the n-type transistor Tr5. When the n-typetransistor Tr5 is ON and the n-type transistor Tr6 is OFF, the electriccharge of the second output node N2 is not discharged, so that theprecharged state thereof is held.

In Example 1, in the second dynamic circuit 1B of NAND type, when noneof the data D0 to D2 is selected and the n-type transistor Tr5 is ON,the n-type transistor Tr6 needs to be already OFF. To achieve this, thethird and fourth dynamic circuits 1C and 1D which control the n-typetransistor Tr6 have a structure which allows a higher-speed operationthan that of the first dynamic circuit 1A. For example, the thirddynamic circuit 1C has two transistors connected in series on a pathwayfrom the third output node N3 to the ground, while the first dynamiccircuit 1A has three transistors connected in series on a pathway fromthe first output node N1 to the ground. Therefore, the third dynamiccircuit 1C has a higher operating speed than that of the first dynamiccircuit 1A. In addition, the third and fourth dynamic circuits 1C and 1Dare disposed nearer the second dynamic circuit 1B than the first dynamiccircuit 1A. As a result, a delay time required for a change in thepotentials of the third and fourth output nodes N3 and N4 of the thirdand fourth dynamic circuits 1C and 1D to be propagated to the n-typetransistor Tr6 of the second dynamic circuit 1B is reduced to be shorterthan a delay time required for a potential change of the first outputnode N1 of the first dynamic circuit 1A to be propagated to the n-typetransistor Tr5 of the second dynamic circuit 1B.

Further, in order to cause the third and fourth dynamic circuits 1C and1D to operate with higher speed than that of the first dynamic circuit1A, a voltage supplied to the third and fourth dynamic circuits 1C and1D may be set to be higher than that of the first dynamic circuit 1A;the threshold voltage of an MOS transistor included in the third andfourth dynamic circuits 1C and 1D may be set to be lower than thethreshold voltage of an MOS transistor included in the first dynamiccircuit 1A; or a size of the MOS transistor included in the third andfourth dynamic circuits 1C and 1D may be set to be larger than a size ofthe MOS transistor included in the first dynamic circuit 1A. Further,when an STI (Shallow Trench Isolation region) is formed on thesemiconductor substrate, it is expected that the performance of thetransistor is deteriorated due to an influence of the STI, andtherefore, the arrangement or configuration may be adapted inconsideration of the influence of the STI. For example, as shown in FIG.2, when a transistor series 61 is formed on an N-type substrate 60, aplurality of transistors of the transistor series 61 which arepositioned at an edge thereof, are used to constitute an n-typetransistor of the first dynamic circuit 1A, while a plurality oftransistors of the transistor series 61 which are positioned in aninside thereof, are used to constitute an n-type transistor in the thirdand fourth dynamic circuits 1C and 1D. With this structure, an isolationregion (STI) 65 is provided between the transistor series 61 and othertransistor series 62 and 63 on the N-type substrate 60. Therefore, atransistor located at the edge of the transistor series 61 issignificantly deteriorated due to the influence of the STI. However,this transistor is the n-type transistor of the first dynamic circuit 1Afor which a high operating speed is not required, and therefore, thedeterioration has less influence. On the other hand, the n-typetransistors of the third and fourth dynamic circuits 1C and 1D for whicha high operating speed is required, are composed of transistors whichare located in the inside of the transistor series 61 so that they arenot significantly influenced by the STI. Therefore, the high operatingspeed can be satisfactorily secured.

Although, in Example 1, the third and fourth dynamic circuits 1C and 1Dare constructed to have a higher operating speed than that of the firstdynamic circuit 1A, the present invention is not limited to this, i.e.,this structure is not necessarily adopted. For example, although thesecond clock CLK2 is input to the gate of the n-type transistor Tr7 ofthe second dynamic circuit 1B in the semiconductor integrated circuit ofFIG. 1, an inverted signal of the third output node N3 of the thirddynamic circuit 1C may be input instead of the second clock CLK2. In thecase of this structure, when none of the data is selected (i.e., all ofthe selection signals S0 to S2 are Low) before rising of the fourthclock CLK4, the third output node N3 becomes High, so that the n-typetransistor Tr7 is turned OFF. Thereafter, when the fourth clock CLK4rises, the fourth output node N4 becomes Low, so that the n-typetransistor Tr6 is turned OFF. Therefore, the third and fourth dynamiccircuits 1C and 1D do not have to be constructed so that their operatingspeed is higher than that of the first dynamic circuit 1A.

Next, the output circuit 1E and the holding circuit 1F which are theremaining portion of the dynamic flip-flop circuit will be described.The output circuit 1E receives a signal of the first output node N1 ofthe first dynamic circuit 1A and a signal of the second output node N2of the second dynamic circuit 1B, and comprises an inverter IN4, a NORcircuit NOR1, a first p-type MOS transistor Tr20, and three n-type MOStransistor Tr21, Tr22 and Tr23. The drain of the p-type MOS transistorTr20 and the drain of the first the n-type transistor Tr21 are connectedto each other to form a seventh output node N7. A signal of the secondoutput node N2 of the second dynamic circuit 1B is input to the gate ofthe p-type MOS transistor Tr20. The NOR circuit NOR1 comprises twop-type transistors Tr24 and Tr25 and an n-type transistor Tr26, andreceives a signal of the first output node N1 of the first dynamiccircuit 1A and a signal obtained by inverting a signal of the secondoutput node N2 of the second dynamic circuit 1B using the inverter IN4,and outputs a signal as a sixth output node N6 to the gate of first then-type transistor Tr21.

Therefore, in the output circuit 1E, when the second output node N2 ofthe second dynamic circuit 1B is Low and the first output node N1 of thefirst dynamic circuit 1A is High, the p-type transistor Tr20 is turnedON and the n-type transistor Tr21 is turned OFF, so that the seventhoutput node N7 is precharged to the power source potential Vdd, i.e.,the potential there of becomes High. On the other hand, when the secondoutput node N2 is High and the first output node N1 is Low, the p-typetransistor Tr20 is turned OFF and the n-type transistor Tr21 is turnedON, so that the electric charge of the seventh output node N7 isdischarged, i.e., the potential thereof becomes Low.

In the output circuit 1E, the gate of the second n-type transistor Tr22receives a signal of the fourth output node N4 of the fourth dynamiccircuit 1D, the source of the second n-type transistor Tr22 is grounded,and the drain of the second n-type transistor Tr22 is connected to thesource of the n-type transistor Tr21. In the n-type transistor Tr22,when the potential of the seventh output node N7 is High, the output ofthe NOR circuit NOR1 (sixth output node N6) becomes High due to areduction in the potential of the first output node N1 of the firstdynamic circuit 1A. In this case, even if the n-type transistor Tr21 isturned ON, since the n-type transistor Tr22 is held in the OFF state,the potential of the seventh output node N7 is prevented fromerroneously becoming Low and a through current is prevented.

Next, the holding circuit 1F will be described. The holding circuit 1Ffunctions as a feedback buffer, and comprises a first inverter IN5 and asecond inverter IN6. The seventh output node N7 of the holding circuit1E is connected to the input side of the first inverter IN5. Theinverter IN5 is connected to the input side of the second inverter IN6.The output side of the second inverter IN6 is connected to the seventhoutput node N7. Further, the holding circuit 1F comprises a first p-typeMOS transistor Tr27 and a first n-type MOS transistor Tr28 whichconstitute the second inverter IN6, a second n-type MOS transistor Tr29,and a delay cell 59. The second n-type MOS transistor Tr29 is disposedin series between the first p-type MOS transistor Tr27 and the firstn-type MOS transistor Tr28. The inverters IN5 and IN6 each hold thepotential of the seventh output node N7 of the holding circuit 1E. Theheld potential is inverted by the inverter IN7 before being outputthrough the output terminal Q. An output of the first inverter IN5 isdelayed by a predetermined time in the delay cell 59 before being outputthrough the output terminal SO.

In the holding circuit 1F, the gate of the n-type MOS transistor Tr29receives a signal of the second output node N2 of the second dynamiccircuit 1B, the drain of the n-type MOS transistor Tr29 is connected tothe drain of the p-type transistor Tr27, and the source of the n-typeMOS transistor Tr29 is connected to the drain of the n-type transistorTr28. The n-type transistor Tr29 has the following function.Specifically, when the seventh output node N7 of the output circuit 1Eis Low, the output node N7 is grounded via the n-type transistor Tr28 ofthe second inverter IN6. When the second output node N2 of the seconddynamic circuit 1B starts going from High to Low, the p-type transistorTr20 of the output circuit 1E is turned ON, so that the seventh outputnode N7 starts being precharged to the power source potential Vdd. Inthis case, the n-type transistor Tr29 is turned OFF by causing thesecond output node N2 to be Low, so that a pathway from the seventhoutput node N7 via the n-type transistor Tr28 to the ground is cut off,thereby promoting the precharge operation of the seventh output node N7.

Next, an operation of the semiconductor integrated circuit of Example 1will be described with reference to a timing chart illustrated in FIG.4. For the sake of simplicity, it is assumed that first to fourth clocksCLK1 to CLK4 are the same clock CLK.

During a first period of the clock CLK, the data D0 is High in a datavalid period (a time satisfying setup and hold times) before and afterthe rising of the clock, and after the data valid period has passed, thedata D0 becomes Low. The other data D1 and D2 are High. The selectionsignal S0 is Low during the data valid period and becomes High after thedata valid period has passed. The other selection signals S1 and S2 areLow. Therefore, during the first period, none of the data D0 to D2 isselected.

In this state, during the data valid period, the first output node N1 ofthe first dynamic circuit 1A is High, and therefore, the n-typetransistor Tr5 is turned ON in the second dynamic circuit 1B. As aresult, in the conventional example of FIG. 3A, when the second outputnode N2 is High, the second output node N2 erroneously goes to Low, sothat the flip-flop circuit erroneously outputs an “L” signal instead ofa true “H” signal.

However, in Example 1, the third output node N3 of the third dynamiccircuit 1C is High, and the fourth output node N4 of the fourth dynamiccircuit 1D becomes Low after rising of the clock. Therefore, in thesecond dynamic circuit 1B, the n-type transistor Tr6 is turned OFFbefore the n-type transistor Tr5 is turned ON, so that the second outputnode N2 is prevented from erroneously becoming Low, i.e., the secondoutput node N2 is held High. Therefore, in the output circuit 1E, theseventh output node N7 is held Low, so that the holding circuit 1Foutputs the true “H” signal.

On the other hand, it is now assumed that the seventh output node N7 ofthe output circuit 1E is held High. For example, even if the selectionsignal S2 becomes High after rising of the clock CLK and the firstoutput node N1 of the first dynamic circuit 1A becomes Low (not shown),the sixth output node N6 becomes High in the output circuit 1E, so thatthe n-type transistor Tr21 is turned ON. In this case, however, then-type transistor Tr22 is turned OFF, so that the seventh output node N7is not grounded, so that the seventh output node N7 is held High. Thisis because, in the OFF operation of the n-type transistor Tr22, evenwhen the third output node N3 of the third dynamic circuit 1C becomesLow as the selection signal S2 goes to High, the fourth output node N4of the fourth dynamic circuit 1D is held Low.

Note that FIG. 4 illustrate that the data D0 is Low, the data D1 and D2are High, the selection signal S0 is High, and the selection signals S1and S2 are Low, i.e., the data D0 is selected, during the second periodof the clock CLK.

In Example 1, an OR circuit or a latch circuit is not provided beforethe clock as illustrated in FIG. 3B, and therefore, it is not necessaryto set up a selection signal, thereby making it possible to provide adynamic flip-flop circuit capable of operating with high speed.

Although, in the above description about the operation, the first tofourth clocks CLK1 to CLK4 are the same clock which provides the sametime, the clocks may have a difference in phase to some extent. In thiscase, it is preferable that the first clock CLK1 leads the second clockCLK2. Also, the third and fourth clocks CLK3 and CLK4 preferably leadthe first and second clocks CLK1 and CLK2.

Note that a delay value of the clock CLK2 to be input to the seconddynamic circuit 1B may not be set to be a predetermined value, and theclock CLK2 may be generated based on the clock CLK3 of the third dynamiccircuit 1C. A circuit structure of this case is illustrated in FIG. 9.In FIG. 9, a dynamic circuit A1 is additionally provided. The dynamiccircuit A1 has a series circuit of the same number of n-type MOStransistors as the number of n-type MOS transistors connected in seriesin the first dynamic circuit 1A of FIG. 1. A plurality of the seriescircuits are connected in parallel to construct a parallel circuitportion, which is the same as that of the first dynamic circuit 1A,except for a structure of inputting a scan signal SE. An output A1-1 ofthe dynamic circuit A1 thus additionally provided is inverted in aninverter IN10, and is then input to the n-type transistor Tr7 of thesecond dynamic circuit 1B.

The dynamic circuit A1 additionally provided in FIG. 9 further includesa clock generation circuit A2 which generates a clock CLK4, which isinput to the fourth dynamic circuit 1D, based on the clock CLK3 inputfrom the third dynamic circuit 1C of FIG. 1. In the clock generationcircuit A2, a junction capacitance portion of multi-input gates of dataor the like is constructed to be apparently equivalent to the outputpoint A1-1 of the dynamic circuit A1, and an output A2-1 is inverted inan inverter IN11 and is then input to the n-type transistor Tr14 of thefourth dynamic circuit 1D. The clock generation circuit A2 is furtherprovided with a precharge circuit A2-2 composed of a p-type MOStransistor Tr40. The precharge circuit A2-2 has a function ofprecharging the output point A2-1 of the clock generation circuit A2. Aclock input to the gate of the p-type transistor Tr40 is the clock CLK3which is input to the third dynamic circuit 1C. A delay differenceduring discharge between the output A1-1 of the dynamic circuit A1 andthe output A2-1 of the clock generation circuit A2 depends on a currentdifference between n-type MOS transistors to which the selection signalsS0 to S3 are input. By compensating for the delay difference using theinverter IN11, a reliable operation can be achieved.

Note that, in the circuit of FIG. 1, when any one of the selectionsignals S0 to S3 is output in addition to the selection signal SE, theoutput may become indeterminate if the dynamic circuit A1 istransitioned earlier than the dynamic circuit 1A. However, in FIG. 9,the gates of five NMOS transistors Ts1 to Ts4, which are connected inseries to transistors to which the selection signals SE and S0 to S3 areinput, respectively, are grounded so as not to be conductive. Therefore,since a current path through which the electric charge is dischargedfrom the node A2-1 to the ground is a single path via an NMOS transistorTs5 whose gate is fixed to the power source voltage Vdd, the dynamiccircuit A1 is transitioned later than the dynamic circuit 1A. As aresult, data which is output to the output terminal Q is an OR output ofdata selected from the data D0 to D3. This structure is effective sincean expected value does not become indeterminate when a scan test isperformed.

An exemplary layout structure of the semiconductor integrated circuit ofFIG. 9 is illustrated in FIG. 10. In FIG. 10, a circuit portion ofn-type transistors for receiving the selection signals S0 to S3 of thefirst dynamic circuit 1A and n-type transistors for receiving the dataD0 to D3, and a circuit portion of n-type transistors for receiving theselection signals S0 to S3 of the dynamic circuit A1 of FIG. 9 arevertically arranged. As a result, the wiring capacitance of input pinsis reduced. In addition, since both the circuit portions are close toeach other, a variation component between the dynamic circuits 1A and A1during the production process is reduced, and a voltage variation and atemperature variation are advantageously reduced. An input circuitportion is typically composed of a plurality of n-type transistors,which receives selection signals and data. The number of selectionsignals or pieces of data varies among applications. Therefore, a numberof layouts having a different number of selection signals or pieces ofdata are required. By preparing a layout having a maximum number ofinputs, a layout having a smaller number of inputs can be obtained onlyby reducing the number of n-type MOS transistors on the left side ofFIG. 10. Therefore, the number of steps for layout can be reduced.

Note that the transistor Tr91 of the dynamic circuit 1A has a functionas a keeper to hold the electric charge of the node N1. In this case, itis desirable that the source of the transistor Tr91 is connected to thedrain (node N20) of the transistor Tr93 of the dynamic circuit A1.Thereby, for example, the signal transition speed of the node N1 becomeshigher than when the source of the transistor Tr91 is connected to thedrain of the transistor Tr94 of the dynamic circuit 1A. This is becausethe drain capacitance of the transistor Tr93 of the dynamic circuit A1does not have an influence on the node N1. The same is true of thetransistor Tr92 of the dynamic circuit 1B.

In addition, when the number of pieces of data to be input isconsiderably large, the pieces of data may be divided into two groups.For example, in a semiconductor integrated circuit of FIG. 11, a groupof the first to fourth dynamic circuits 1A to 1D and A1 of FIG. 9 andanother group of first to fourth dynamic circuits 1A′ to 1D′ and A1′having the same structure as that of the former group are provided. Whenthe number of pieces of data is 2N, data D1 to DSN are input to onegroup, while data DSN+1 to D2N are input to the other group. The twogroups are input in parallel to the gates of the n-type transistors Tr20and Tr21 of the output circuit 1E of FIG. 1. Further, a selection signalmatching detection circuit 1J which detects a match between the outputsA1-1 and A1-1′ of the dynamic circuit A1 or a match between the outputsA2-1 and A2-1′ of the clock generation circuit A2 is further provided.An output 1J-1 of the output circuit 1E of FIG. 1 is connected to thegate of the n-type transistor Tr22. With this structure, thecapacitances of the first nodes N1 and N1′ of the first dynamic circuits1A and 1A′ are half of a value which is obtained when only one group isprovided, thereby making it possible to increase the operating speed.

Example 2

Next, Example 2 of the present invention will be described. In Example2, the output circuit 1E of FIG. 1 is modified as shown in FIG. 5.

Specifically, an output circuit 1G of FIG. 5 is composed of adifferential circuit 70. More specifically, the differential circuit 70has a pair of differential input terminals 70 a and 70 b, a pair ofdifferential output terminals 70 c and 70 d, two p-type MOS transistorsTr30 and Tr31 and two n-type MOS transistors Tr32 and Tr33 which arecross-linked, and two n-type MOS transistors Tr34 and Tr35 for receivinga differential signal, to whose gates the differential input terminals70 a and 70 b are connected. The differential output terminals 70 c and70 d are connected to a connection point of the p-type transistor Tr30and the n-type transistor Tr32 and a connection point of the p-typetransistor Tr31 and the n-type transistor Tr33, respectively. Thedifferential output terminals 70 d and 70 c are the output terminal Qand its inverted output terminal NQ of the semiconductor integratedcircuit of FIG. 1, respectively.

A signal of the second output node N2 of the second dynamic circuit 1Bof FIG. 1 is input to the differential input terminal 70 a. An ORcircuit 71 is connected to the differential input terminal 70 b. Asignal obtained by inverting the signal of the second output node N2 ofthe second dynamic circuit 1B using an inverter 72, and a signal of thefirst output node N1 of the first dynamic circuit 1A are input to the ORcircuit 71.

Further, a control transistor Tr36 including an n-type MOS transistor isconnected to a ninth node N9 which is the source of the two n-type MOStransistors Tr34 and Tr35 for receiving the differential signal. Thesource of the control transistor Tr36 is grounded, the drain thereof isconnected to the ninth node N9, and the gate thereof receives, as acontrol signal, a fifth clock signal CLK5 which is generated by a clockgeneration circuit 1H of FIG. 6.

An internal structure of the clock generation circuit 1H will bedescribed. In FIG. 6, the clock generation circuit (signal generationcircuit) 1H comprises a short pulse generation circuit 75 whichgenerates a short pulse at the same cycle as that of the first clockCLK1, and a NAND circuit NAND11. The short pulse generation circuit 75has an inverter IN10 which inverts a first clock CLK1, a NAND circuitNAND10 which receives outputs of the first clock CLK1 and the inverterIN10, and an inverter IN11 which inverts an output of the NAND circuitNAND10. The NAND circuit NAND11 receives an output of the inverter IN11and a signal of the fourth output node N4 of the fourth dynamic circuit1D of FIG. 1. An output of the NAND circuit NAND11 is a fifth clockCLK5. The clock CLK5 is input as a control signal to an n-typetransistor Tr36 which is provided in the differential circuit 70 of FIG.5 to receive a differential signal.

In the clock generation circuit 1H of FIG. 6, as illustrated in FIG. 7,for example, it is assumed that the selection signal S1 is High so thatthe data D1 is selected during the first period of the first clock CLK1.Since a signal of the fourth output node N4 of the fourth dynamiccircuit 1D is High at the beginning of the first period, when a shortpulse is subsequently generated by the short pulse generation circuit75, the fifth clock CLK5 then goes from High to Low. Thereafter, whenthe short pulse is ended, the fifth clock CLK5 goes from Low to High. Inthis case, by turning ON the control transistor Tr36 partway throughtransition of the fifth clock CLK5 from Low to High, a differentialinput signal is amplified and output. In the other situations, thecontrol transistor Tr36 is held OFF. Therefore, when the fifth clockCLK5 is High, the output circuit 70 functions as a latch which holdsoutput data. With this structure, when the output circuit 1G of FIG. 5is provided, the holding circuit 1F of FIG. 1 is not required after theoutput circuit 1G.

In FIG. 5, an n-type MOS transistor Tr37 is disposed in parallel withthe control transistor Tr36 in the output circuit 1G. The source of then-type transistor (resistor) Tr37 is grounded, and the gate and drainthereof are connected to the ninth node N9 of the differential circuit70. There is a possibility that the potential of the ninth node N9 isincreased due to leakage current when the fifth clock CLK5 is Low. Infact, the n-type transistor Tr37 functions as a resistor, therebysuppressing and preventing the increase of the potential to hold anoptimum potential of the ninth node N9. As a result, the potentialdifference between the source and drain of the n-type transistors Tr34and Tr35 for receiving a differential input is held to be an optimumwhich provides an appropriate gain, whereby a predetermined high-speedoperation of the output circuit 1G is satisfactorily maintained.

In Example 2, the differential circuit 70 rapidly amplifies and outputsa small potential difference between input differential signals, therebyoperating with higher speed than when data is held by the output circuit1E in Example 1.

Example 3

FIG. 8 illustrates a semiconductor integrated circuit according toExample 3 of the present invention.

The semiconductor integrated circuit of Example 3 is different from thesemiconductor integrated circuit of FIG. 1 in an NOR type first dynamiccircuit 2A and an NOR type third dynamic circuit 2C, and both thecircuits have the same second and fourth dynamic circuits 1B and 1D,output circuit 1E and holding circuit 1F.

In the first dynamic circuit 2A, the p-type transistor Tr1 and then-type transistor Tr2 are connected in series. To this series circuit,an n-type MOS transistor Tr80 which receives data D through the gatethereof, and another n-type MOS transistor Tr81 which receives aninverted signal NQ of the output signal Q through the gate thereof areconnected in series. Therefore, in the first dynamic circuit 2A, thepotential of the first output node N1 is basically determined, dependingon the value of the data D. When the data D is output through the outputterminal Q, the inverted output NQ of the data D is used to handle achange in the next data D.

The third dynamic circuit (matching detection circuit) 2C includes anEXNOR circuit EXNOR1. The EXNOR circuit receives the data D, the outputsignal Q, and inverted signals ND and NQ thereof. After rising of thethird clock CLK3, only when there is a match between the data D and theoutput signal Q, the third output node N3 is set to be the power sourcepotential Vdd. Therefore, in the fourth dynamic circuit 2D, when thereis a match between the data D and the output signal Q, the n-typetransistor Tr13 is turned ON, so that the electric charge of the fourthoutput node N4 is discharged. As a result, the n-type transistor Tr6 isturned OFF in the second dynamic circuit 2B.

With the structure, in the dynamic NAND circuit 2D, when the value ofthe data D is the same as that of the output signal Q, the output nodeN4 is transitioned to Low, so that the n-type transistor Tr6 of thesecond dynamic circuit 2B is forcedly turned OFF. Therefore, it ispossible to stop operations of the following second dynamic circuit 2B,output circuit 1E and holding circuit 1F. Therefore, unnecessaryoperations of the circuits 2B, 1E and 1F are prevented, thereby makingit possible to reduce the power of the semiconductor integrated circuit.

Note that the physical arrangement of the dynamic circuits, the size andthreshold voltage characteristics of each transistor, voltages suppliedto the circuits, and the like in Example 3 can be similar to those inExample 1. Further, the output circuit 1E can be replaced with thedifferential output circuit 1G of Example 2. In this case, a stillhigher speed can be achieved.

Although Example 3 illustrates an exemplary flip-flop, a latch circuitmay be implemented by, for example, causing the potential of the node N2to be an output signal. In this case, the holding circuit 1F does nothave to output a signal or does not have to be provided.

Example 4

FIG. 12 is a circuit diagram illustrating another multi-input flip-flopaccording to the present invention. The multi-input flip-flop of FIG. 12is different from those of FIGS. 1 and 9 in the flip-flop of FIG. 12 isoperated with a single clock signal CLK1, and further, in that theflip-flop of FIG. 12 comprises a p-type MOS transistor 12B and a p-typeMOS transistor 12C.

In FIGS. 1 and 9, p-type MOS transistors (transistors Tr4, Tr12 inFIG. 1) are provided whose sources are connected to a power source andwhich are used to charge the nodes N2 and N4. In the circuit of FIG. 12,a p-type MOS transistor 12B is provided whose source and drain areconnected to nodes N1 and N2, respectively, and a p-type MOS transistor12C is provided whose source and drain are connected to nodes N1 and N4,respectively. The gate of the p-type MOS transistor 12B is connected toa node A1-2. The gate of the p-type MOS transistor 12C is connected to anode A2-3. This circuit employs only one clock signal, thereby making itpossible to reduce power consumption, and avoid an erroneous operationdespite use of only one clock signal.

FIGS. 13 and 14 illustrate a relationship between voltage and time ofeach node where, in the circuit of FIG. 12, a signal input patterndiffers between terminals SI, D[1] to D[N−1] and a terminal D[N] orbetween terminals SE, S[1] to S[N−1] and a terminal S[N]. In addition,FIGS. 13 and 14 illustrate waveforms occurring in the circuits of FIGS.1 and 9 when the transistor balance is poor and the circuit is drivenwith a single clock signal, resulting in an erroneous operation. Dashdot lines indicate waveforms when the circuit of FIG. 12 is used, andsolid lines indicate waveforms when the circuits of FIGS. 1 and 9 areused.

A description will be provided in comparison with FIG. 12. In FIG. 13,all input signals of the terminals D[1] to D[N−1], SI, S[1] to S[N], andSE satisfy a desired setup and hold times at the timing of transition ofthe clock signal CLK1 to High and are Low. Only the terminal D[N]satisfies a desired setup and hold times and is High. Thereafter, duringa period when the clock signal CLK1 is High, only the terminal S[N] goesfrom Low to High. As a result, nodes A1-i and N1 go to Low, and a nodeN6 goes to High. When the p-type MOS transistor 12C has a structuresimilar to that of FIGS. 1 and 9, a power source voltage Vdd is suppliedvia the p-type MOS transistor 12C to the node N4 during subsequenttransition of the clock signal CLK1 from High to Low, so that the nodeN4 goes to High. As a result, the High periods of the node N4 and thenode N6 may overlap. When the High periods of the node N4 and the nodeN6 overlap, both transistors Tr21 and Tr22 are caused to be conductive,so that electric charge is discharged from a node N7. In this case,although the node N7 is supposed to be held High, the node N7 mayconversely go to Low, so that an output terminal Q operates erroneously.This is particularly because measures are not particularly taken in acircuit which controls charge of the node N4 and charge of the node N1,so that the node N4 is charged earlier than the node N1, depending onvariations in p-type MOS transistor devices which charge the nodes N4and N1, leading to an erroneous operation.

In the circuit of FIG. 12, however, current-voltage characteristics of avoltage difference between the drain and source of the p-type MOStransistor 12C exhibit linearity up to near a voltage threshold voltageVtp. Since a substrate voltage of the p-type MOS transistor 12C ishigher than a source voltage thereof, the p-type MOS transistor 12Cbehaves as if it is a considerably high resistor. Therefore, it islikely that the node N1 is charged before the node N4 is charged. Inthis case, the timing of transition of the node N4 to High is delayed,so that the possibility that the nodes N4 and N6 simultaneously go toHigh is reduced.

A further description will be provided in comparison with FIG. 12. InFIG. 14, at the timing of transition of the clock signal CLK1 to High,the terminal S[N] satisfies a desired setup and hold times and is High,while input signals of the terminals S[1] to S[N−1], SE, D[1] to D[N],and SI satisfy a desired setup and hold times and are Low. Thereafter,during a period when the clock signal CLK1 is High, only the terminalD[N] goes from Low to High. Therefore, the node N1 goes from High toLow. When the p-type MOS transistor 12B has a structure similar to thatof FIGS. 1 and 9, the nodes N1 and N2 are charged during subsequenttransition of the clock signal CLK1 from High to Low. In this case, ifthe node N1 is charged later than the node N2, the node N2 goes to Highwhile the node N1 goes to Low, so that the node N6 goes to High,resulting in a glitch in the node N7. If the glitch is propagated to theoutput terminal Q, an erroneous operation may occur.

In the circuit of FIG. 12, however, current-voltage characteristics of avoltage difference between the drain and source of the p-type MOStransistor 12B exhibit linearity up to near a voltage threshold voltageVtp. Since a substrate voltage of the p-type MOS transistor 12B ishigher than a source voltage thereof, the p-type MOS transistor 12Bbehaves as if it is a considerably high resistor. Therefore, the node N2goes to High only after the node N1 goes to High. Therefore, the node N6does not go to High, thereby preventing an erroneous operation.

As described above, when the source and drain of the p-type MOStransistor 12B are connected to the nodes N1 and N2, respectively, andthe source and drain of the p-type MOS transistor 12C are connected tothe nodes N1 and N4, respectively, the charging order of the nodes N1and N2 and the charging order of the nodes N1 and N4 are uniquelydetermined without depending on manufacturing variations in device sizeof the p-type MOS transistor, thereby making it possible to obtain amore robust circuit structure.

The circuit of FIG. 12 is further characterized in that, in a dynamiccircuit A1, the gates of MOS transistors AN and A3 to AN−1, which areconnected directly to the power source and the ground in FIG. 9, areconnected to two outputs of a circuit 12A. In a miniaturization process,a thickness of a gate oxide film becomes thin, so that the ESDrobustness of the gate is reduced. Therefore, in the circuit of FIG. 9,when an overvoltage is applied to the power source or the ground, thelow impedance is highly likely to cause punchthrough in the gateelectrode, likely leading to destruction of the MOS transistor. However,by providing the circuit 12A as illustrated in FIG. 12, the gate of theMOS transistor is connected via a resistance between the source and thedrain to the power source and the ground. Therefore, there is a highimpedance between the gate and the power source or the ground, wherebythe MOS transistor is unlikely to be destroyed.

It is also preferable that the circuit 12A is provided as a part of themulti-input flip-flop in the same standard cell in which the output ofthe circuit 12A is input to the gates of a second group of n-typetransistors A3 to AN which in turn operate. This is because such amulti-input flip-flop has a number of input terminals, so that wiringbetween standard cells is complicated. Unless the circuit 12A isprovided in the cell, a cell, such as the circuit 12A, needs to beprovided elsewhere, and the cell and the multi-input flip-flop need tobe connected via wiring, so that the degree of wiring congestion betweenstandard cells is increased. Wiring between standard cells is typicallyautomatically installed. Therefore, wiring may be accidentally arrangedsuch that an output of the circuit 12A is influenced with a crosstalk.When the output of the circuit 12A is contaminated with crosstalk noise,the flip-flop circuit having a multi-input selection function mayperform an erroneous operation. Therefore, in consideration of aninfluence of the crosstalk, it is preferable that the circuit 12A isprovided in the standard cell as long as it is permitted.

In the circuit 12A, the drain of a p-type MOS transistor 12A-2 isassumed to be a node which is connected to the gate of an n-type MOStransistor 12A-1 for the purpose of reduction of the number of devices.Alternatively, similar to the structure of the MOS transistors 12A-2 and12A-3, another p-type MOS transistor is provided, and the drain and gateof the p-type MOS transistor are connected in common to the gate of then-type MOS transistor 12A-1.

When the circuit 12A is provided further below the right and left n-typeMOS transistors in a lower portion of FIG. 10, the circuit 12A can beconnected to the following stage without long wiring of a circuit A1 andthe node N1 of FIG. 12. If the circuit of FIG. 12 is a standard cell,NWELL and PWELL are provided at a lower end thereof again. Therefore,cells can be arranged without considering a distance constraint of aninterface between different wells at an interface between lower cells.

Example 5

FIG. 15 is a circuit diagram illustrating another multi-input flip-flopaccording to the present invention.

The multi-input flip-flop of FIG. 15 is different from those of FIGS. 1and 9 in the flip-flop of FIG. 15 is operated with a single clock signalCLK1, and further, in circuit portions 13B, 13C and 13A of the flip-flopof FIG. 15. In FIG. 1, p-type MOS transistors (transistors Tr4, Tr12 inFIG. 1) are provided whose sources are connected to a power source andwhich are used to charge the dynamic node portions N2 and N4. In thecircuit of FIG. 15, further, other p-type MOS transistors (p-type MOStransistor 13B1, p-type MOS transistor 13C1) are connected to the drainof a p-type MOS transistor for charging, and are connected via thesource and drain to nodes N2 and N4, respectively. The gate of thep-type MOS transistor 13B1 and the gate of the p-type MOS transistor13C1 are connected to an output of an inverter circuit INV13 of the nodeN1. Further, although the source of the p-type MOS transistor 13A isconnected to the power source in FIG. 11, it is connected to a node A1-1of FIG. 15. Thus, this circuit employs only one clock signal, therebymaking it possible to reduce power consumption, and avoid an erroneousoperation despite use of only one clock signal.

FIGS. 16 and 17 illustrate a relationship between voltage and time ofeach node where, in the circuit of FIG. 15, a signal input patterndiffers between terminals D[1] to D[N−1] and a terminal D[N] and betweenterminals S[1] to S[N−1] and a terminal S[N]. In addition, FIGS. 16 and17 illustrate waveforms occurring in the circuits of FIG. 9 when thetransistor balance is poor and the circuit is driven with a single clocksignal, resulting in an erroneous operation. Dash dot lines indicatewaveforms when the circuit of FIG. 15 is used, and solid lines indicatewaveforms when the circuit of FIG. 9 is used.

A description will be provided in comparison with FIG. 15. In FIG. 16,all input signals of the terminals S[1] to S[N] satisfy a desired setupand hold times at the timing of transition of the clock signal CLK1 toHigh and are Low. Thereafter, during a period when the clock signal CLK1is High, only the terminal S[N] goes from Low to High. As a result,nodes A1-i and N1 go to Low, and a node N6 goes to High. When thecircuit 13C has a structure similar to that of FIGS. 1 and 9, a powersource voltage Vdd is supplied via two p-type MOS transistors 13C1 and13C2 to the node N4 during subsequent transition of the clock signalCLK1 from High to Low, so that the node N4 goes to High. As a result,the High periods of the node N4 and the node N6 may overlap. When theHigh periods of the node N4 and the node N6 overlap, both transistorsTr21 and Tr22 are made conductive, so that electric charge is dischargedfrom a node N7. In this case, although the node N7 is supposed to beheld High, the node N7 may conversely go to Low, so that an outputterminal Q operates erroneously. This is because measures are notparticularly taken in a circuit which controls charge of the node N4 andcharge of the node N1, so that the node N4 is charged earlier than thenode N1, depending on variations in p-type MOS transistor devices whichcharge the nodes N4 and N1, leading to an erroneous operation.

In the circuit of FIG. 15, however, the circuit 13C is not turned ONunless a potential of an output of the inverter circuit INV13 of thenode N1 is smaller than or equal to a difference between a thresholdvoltage of a p-type MOS transistor in the circuit 13C and a power sourcevoltage Vdd. Therefore, it is likely that the node N1 is charged earlierand the node N4 is charged later. Therefore, the possibility that thenodes N4 and N6 are simultaneously High is reduced.

A further description will be provided in comparison with FIG. 15. InFIG. 17, at the timing of transition of the clock signal CLK1 to High,the terminal S[N] satisfies a desired setup and hold times and is High,while input signals of the terminals S[1] to S[N−1], SE, D[1] to D[N],and SI satisfy a desired setup and hold times and are Low. Thereafter,during a period when the clock signal CLK1 is High, only the terminal D[N] goes from Low to High. Therefore, the node N1 goes from High to Low.Thereafter, in the circuit of FIG. 1, the nodes N1 and N2 are changedduring subsequent transition of the clock signal CLK1 from High to Low.In this case, if the node N1 is charged later than the node N2, the nodeN2 goes to High while the node N1 goes to Low, so that the node N6 goesto High, resulting in a glitch in the node N7. If the glitch ispropagated to the output terminal Q, an erroneous operation may occur.

In the circuit of FIG. 15, however, the node N2 is not charged unless apotential of an output of the inverter circuit INV13 of the node N1 issmaller than or equal to a difference between a threshold voltage of ap-type MOS transistor 13B1 in the circuit 13B and the power sourcevoltage Vdd. Therefore, the node N2 goes to High only after the node N1goes to High. Therefore, the node N6 does not go to High, therebypreventing an erroneous operation.

Further, in FIG. 18, when the clock signal CLK1 goes to High, theterminals D[N] and S[N] satisfy a desired setup and hold times and areHigh, while input signals of the terminals S[1] to S[N−1], SE, D[1] toD[N−1], and SI satisfy a desired setup and hold times and are Low.Thereafter, during a period when the clock signal CLK1 is High, theterminal D[N] goes from High to Low. Thereafter, the clock signal CLK1goes from High to Low. In this case, the node A1-1 and the node N1 arecharged. The node N1 reaches a threshold voltage Vtn of the n-type MOStransistor earlier than the node A1-1, depending on transistorvariations in the p-type MOS transistor. In this case, a through currentflows through the node N25, resulting in a glitch in the node N2. Theglitch is propagated to the node N7, so that an erroneous operationoccurs in the output terminal Q.

In the circuit of FIG. 15, however, since the source of the p-type MOStransistor 13A is connected to the node A1-1, current-voltagecharacteristics of a voltage difference between the drain and source ofthe p-type MOS transistor 13A exhibit linearity up to near a voltagethreshold voltage Vtp. Since a substrate voltage of the p-type MOStransistor 13A is higher than a source voltage thereof, the p-type MOStransistor 13A behaves as if it is a considerably high resistor.Therefore, the node A1-1 is charged first before start of charging ofthe node N1. Therefore, after a gate voltage of an n-type MOS transistor1E-1 becomes smaller than or equal to a threshold voltage of the n-typeMOS transistor, a gate voltage of an n-type MOS transistor 1E-2 becomeseasier to be larger than or equal to a threshold voltage, so that thethrough current of the node N2 becomes difficult to flow, and therefore,a glitch does not occur in the node. N7. Further, in FIG. 15, the gateof a p-type MOS transistor 13B2 and the gate of a p-type MOS transistor13C2 are connected to the clock signal CLK1. Therefore, in FIG. 15, whenthe clock signal CLK1 has a voltage of (Vdd−Vtp) or more, the node N2 isready for discharging. Therefore, the node N2 can operate faster thanthat of FIG. 12. This is an advantage over the circuit of FIG. 12, inwhich discharging of the node N2 starts only after a voltage of a nodeA1-2 reaches (Vdd−Vtp) or more.

As described above, the source of the p-type MOS transistor 13B2 isconnected to the power source. The drain of the p-type MOS transistor13B2 is connected to the source of the first p-type MOS transistor 13B1.The drain of the p-type MOS transistor 13B1 is connected to the node N2.The gate of the second p-type MOS transistor 13B2 is connected to theclock signal CLK1. The gate of the p-type MOS transistor 13B1 isconnected to the output of the inverter circuit INV13 of the node N1.The source of the p-type MOS transistor 13C1 is connected to the powersource. The drain of the p-type MOS transistor 13C1 is connected to thesource of the p-type MOS transistor 13C1. The drain of the p-type MOStransistor 13C2 is connected to the node N4. The gate of the p-type MOStransistor 13C2 is connected to the clock signal CLK1. The gate of thep-type MOS transistor 13C1 is connected to the output of the invertercircuit INV13 of the node N1. The source of the p-type MOS transistor13A is connected to the node A1-1. As a result, the charging order ofthe node A1-1 and the node N1, the charging order of the node N1 and thenode N2, and the charging order of the node N1 and the node N4 are eachuniquely determined without depending on manufacturing variations indevice size of the p-type MOS transistor, thereby making it possible toobtain a more robust circuit structure.

The structure in which the source of the p-type MOS transistor 13A isconnected to the node A1-1 is described above. Alternatively, the sourceof the p-type MOS transistor 13A may be connected to the drain ofanother p-type MOS transistor, whose source may be in turn connected tothe power source and whose gate may be in turn connected to the outputof the inverter circuit of the node A1-1. In this case, a similar effectcan be obtained. In other words, the present invention may beimplemented with any circuit structure in which the charging order ofthe node A1-1 and the node N1, the charging order of the node N1 and thenode N2, and the charging order of the node N1 and the node N4 can eachbe uniquely determined without depending on manufacturing variations indevice size of the p-type MOS transistor. Such a circuit structure canbe achieved with a combination of various circuits, and does not departfrom the scope of the present invention.

Example 6

FIG. 19 is another circuit diagram illustrating dynamic circuits 1C and1D of the multi-input flip-flop of FIG. 1.

The dynamic circuits 1C and 1D of FIG. 19 are different from those ofFIG. 1 in that the source and drain of a p-type MOS transistor A13 areconnected to a node N3 and a node A2-2, respectively, in place of thep-type MOS transistor Tr9 for charging the node N3. In addition,although the clock signal CLK4 is connected to the gate terminal of thetransistor Tr14 of the dynamic circuit 1D in FIG. 1, an output of aninverter circuit 1N14 is connected to the gate terminal of a transistorTr14 in FIG. 19.

Such a circuit structure has an advantage such that when a signal havingthe same phase as that of a clock signal CLK3 is input to a clock signalCLK4, i.e., the circuit is driven only based on the clock signal CLK3 asin FIG. 19, the circuit can operate with an even lower power sourcevoltage. The reason will be described as follows. In the circuitstructure of FIG. 1, it is assumed that the clock signal CLK4 and theclock signal CLK3 having the same phase are input. When the clock signalCLK3 goes from Low to High with a low power source voltage which is inthe vicinity of a threshold voltage of the n-type MOS transistor (e.g.,the threshold voltage of the n-type MOS transistor is 0.3 V and thepower source voltage is 0.5 V), it takes an overwhelmingly longer timefor the node N3 to discharge than for the gate terminal of thetransistor Tr14. In this case, the node N4 goes to High, but not Low,though the transistor Tr13 is supposed to be cut off and the node N4 issupposed to go to High (i.e., any of the terminals S[1] to S[N] and theterminal SE goes to High).

In the structure of FIG. 19, however, when the clock signal CLK3 goesfrom Low to High, the nodes N3 and A2-2 simultaneously startdischarging. When the node N14A goes to no more than a switching levelof the inverter circuit 1N14, the voltage of the gate of the transistorTr14 is increased. Therefore, the node N3 goes to no more than thethreshold voltage of the n-type MOS transistor Tr13 before the gate ofthe transistor Tr14 goes to High. In this case, it is unlikely that athrough current flows through the node N4 via the transistors Tr13 andTr14. As a result, a low-voltage operation which is stabler than that ofthe circuit structure of FIG. 1 is obtained.

Further, when the clock signal CLK3 goes from High to Low,current-voltage characteristics of a voltage difference between thedrain and source of the p-type MOS transistor A13 exhibit linearity upto near a voltage threshold voltage Vtp. Since a substrate voltage ofthe p-type MOS transistor A13 is higher than a source voltage thereof,the p-type MOS transistor A13 behaves as if it is a considerably highresistor. The node N3 is charged only after the potential of the nodeA2-2 becomes higher than or equal to the threshold voltage of the p-typeMOS transistor A13. In other word, the transistor Tr13 is turned ON onlyafter the gate of the transistor Tr14 is lowered to some extent. Sincethe node N4 is charged in accordance with the clock signal CLK3, aglitch is suppressed from occurring in the potential of the node N4 whenthe transistor Tr13 is turned ON. As a result, an erroneous operationwhich is involved with the dynamic the circuits A1 and 1D is suppressed.

Example 7

FIG. 20 illustrates an exemplary application of FIG. 11.

In FIG. 11, a flip-flop is provided which has a multi-input selectionfunction in which input data is divided into two groups. In FIG. 20,transistors of the output circuits 1E are combined to construct a NANDlogic circuit with respect to outputs of a multi-input selectionfunction composed of dynamic circuits 1A to 1D, and A1 and a multi-inputselection function composed of dynamic circuits 1A′ to 1D′, and A1′.

Specifically, two p-type MOS transistors Tr20 which have a common sourceand drain are provided. The p-type MOS transistor pair Tr21 is connectedin series to each other. Further, in FIG. 11, a holding circuit portionis provided which is composed of an inverter connected to the drain ofthe p-type MOS transistor Tr20 and another inverter which receives anoutput of the inverter. In the holding circuit portion, one stage ofn-type MOS transistor to the gate of which the second output nodes N2 ofthe dynamic circuits 1A to 1D and A1 are connected is provided betweenan N-type MOS transistor and a p-type MOS transistor constituting one ofthe inverters. In FIG. 20, one stage of n-type MOS transistor 16A to thegate of which the second output nodes N2 of the dynamic circuits 1A′ to1D′ and A1′ are connected is provided, thereby maintaining the highspeed of the holding circuit portion. Note that the two stages of n-typeMOS transistors may be provided between the ground and the n-type MOStransistor constituting the inverter.

In this example, an exemplary NAND logic has been described. The presentinvention is not limited to this. Various combined logic circuits can beproduced. In addition, by replacing a dynamic logic portion involved inthe dynamic circuit 1A or 1A′ with various logics, a flip-flop circuithaving more various combined logic functions can be constructed.Further, a signal selected from a plurality of input signals may bedivided into a plurality of signals, each of which may be input to aNAND circuit, a NOR circuit, an EXOR circuit, or the like. Thereby, thesingle selected signal may be subjected to different logical operationsso that a plurality of signals thus logically operated are output.Furthermore, a MOS transistor may be added to the transistor Tr20 or thetransistor Tr21, and the gate terminal thereof may be connected to anoutput of another multi-input dynamic circuit. The resultant circuitdoes not depart from the scope of the present invention.

FIG. 21 illustrates another exemplary application of FIG. 11, in whichthe source and drain of a transistor Tr21 in each output circuit areconnected in common.

Example 8

FIG. 22 illustrates another exemplary application of FIG. 11, in whichonly a scan input circuit is provided in dynamic circuits 1A′ to 1D′ andA1′.

The dynamic circuits 1A′ to 1D′, A1′, 17B and 17C are static flip-flopswhich share a holding circuit portion 17E and an output portion of anoutput terminal Q with a multi-input selection function flip-flopcomposed of dynamic circuits 1A to 1D and A1. Further, the circuit ofFIG. 22 is different from that of FIG. 11 in that the gate of an n-typeMOS transistor 17D is connected to an inverted output of a scan enablesignal SE.

With this circuit structure, when the scan enable signal is activated,transistors Tr22 and Tr20 are cut off, while only the circuit elements17B and 17C are operated. The circuit has an advantage such that thecapacitance of a node N1 can be reduced, and in an ordinary path, highspeed can be achieved by using a dynamic flip-flop. For a scan path, ahold time during scan input is shortened by using a static flip-flop,thereby effectively securing a margin for a scan shift operation.

Note that by combining an output circuit portion of the dynamic circuitand an output portion of the static circuit with an output circuitportion 17F, a flip-flop circuit having more various logic functions canbe obtained. As described above, in the present invention, theadvantages of the dynamic circuit and the static circuit can beselectively utilized, depending on the function of an input signal or adesired specification.

The eight embodiments have been heretofore described. It is easy forthose skilled in the art to exchange a portion of the circuit structureof a semiconductor integrated circuit of any one of the eightembodiments with a portion of the circuit structure of any one of theother embodiments. For example, the dynamic circuit 1B of FIG. 8 may beexchanged with the dynamic circuit 1B of FIG. 9.

1-16. (canceled)
 17. The semiconductor integrated circuit which receivesa clock, data, and previous output data of a holding circuit, and whenthe clock is transitioned, outputting the data while holding the data inthe holding circuit, the semiconductor integrated circuit comprising: amatching detection circuit of detecting a match between the data and theprevious data of the holding circuit, wherein when the matchingdetection circuit has detected the match between the data and theprevious data of the holding circuit, at least a portion of the holdingcircuit is stopped. 18-47. (canceled)